NP100P06PD-RE, TR-P-FET 60V 100A 1.8W SMD (TO263), TRANZISTORI, P-FET

Manufacturer: Renesas Electronics
Product Category: MOSFET
RoHS:  Details
Technology: Si
Mounting Style: SMD/SMT
Package/Case: TO-263-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 100 A
Rds On - Drain-Source Resistance: 6 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
Qg - Gate Charge: 300 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 1.8 W
Channel Mode: Enhancement
Packaging: Tube
Brand: Renesas Electronics
Height: 4.9 mm
Length: 10 mm
Product Type: MOSFET
Subcategory: MOSFETs
Width: 9.15 mm
Unit Weight: 4 g

Šifra: 126135

Količina: 10

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