STP4NC60FP-ST, TR-N-FET 600V 4.2A 35W 2R2(TO220F), TRANZISTORI, N-FET

Product Category: MOSFET
Manufacturer: STMicroelectronics
Technology: Si
Mounting Style: Through Hole
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 4.2 A
Rds On - Drain-Source Resistance: 2.2 Ohms
Vgs - Gate-Source Voltage: 30 V
Maximum Operating Temperature: + 150 C
Channel Mode: Enhancement
Configuration: Single
Fall Time: 19 ns
Height: 9.3 mm
Length: 10.4 mm
Minimum Operating Temperature: - 65 C
Pd - Power Dissipation: 35 W
Rise Time: 14 ns
Transistor Type: 1 N-Channel
Typical Turn-On Delay Time: 14 ns
Width: 4.6 mm

Šifra: 20761

Količina: 0

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