IPD025N06NATMA1-INF, TR-N-FET-SMD-60V 90A 167W 2.1mR(TO252), TRANZISTORI, N-FET-TO252

Technology: Si
Mounting Style: SMD/SMT
Package/Case: TO-252-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 90 A
Rds On - Drain-Source Resistance: 2.1 mOhms
Vgs th - Gate-Source Threshold Voltage: 2.1 V
Vgs - Gate-Source Voltage: 20 V
Qg - Gate Charge: 83 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Configuration: Single
Qualification: AEC-Q100
Channel Mode: Enhancement
Fall Time: 12 ns
Forward Transconductance - Min: 80 S
Height: 2.3 mm
Length: 6.5 mm
Pd - Power Dissipation: 167 W
Rise Time: 20 ns
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 34 ns
Typical Turn-On Delay Time: 16 ns

Šifra: 117046

Količina: 11

Kataloški brojevi: IPD025N06NATMA1

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