FF150R12KT3G-INFINEON, IGBT MODULE N-CH 1200V 225A, MODUL, IGBT

Manufacturer: Infineon
Product Category: IGBT Modules
RoHS:  Details
Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 2.15 V
Continuous Collector Current at 25 C: 225 A
Gate-Emitter Leakage Current: 400 nA
Pd - Power Dissipation: 780 W
Package/Case: 62 mm
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 125 C
Packaging: Tray
Brand: Infineon Technologies
Height: 30.9 mm
Length: 106.4 mm
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Chassis Mount

Šifra: 126853

Količina: 0

Kataloški brojevi: FF150R12KT3G

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